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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1360
DESCRIPTION *With TO-126 package *Complement to type 2SC3423 *High transition frequency APPLICATIONS *Audio frequency amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55+150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -5 1.2 W UNIT V V V mA mA
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1360
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
B
-150
V
VCEsat VBE
Collector-emitter saturation voltage
IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V
-1.0
V
Base-emitter on voltage
-0.8
V A A
ICBO
Collector cut-off current
VCB=-150V; IE=0
-0.1
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
hFE
DC current gain
IC=-10mA ; VCE=-5V
80
240
Cob
Output capacitance
IE=0 ; VCB=-10V f=1MHz
2.5
pF
fT
Transition frequency
IC=-10mA ; VCE=-10V
200
MHz
hFE Classifications O 80-160 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1360
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1360
4


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